Bilingual edition: English is preserved and Chinese follows each unit. Terminology uses the confirmed v20260916 glossary; automated semantic review remains traceable.
中英双语版:英文原文完整保留,中文紧随对应单元;术语采用 v20260916 确认表,自动语义审校结果可追溯。

Unijunction Transistor

单结晶体管

The characteristic curve for the UJT shows a negative resistance region. A common use of the device is to make a relaxation oscillator.

UJT的特性曲线显示一个负电阻区域。该器件的常见用途是制作弛张振荡器。

An n-type unijunction transistor (left symbol) is made by implanting a small p-type emitter probe in a bar of n-type silicon. The emitter probe is offset from the center of the bar and there are two bases as shown below.

一个N型单结晶体管(左符号)是通过将一小块P型发射极探针植入N型硅棒中制成的。发射极探针偏离棒的中心,如图所示,有两个基极。
Index

Electronics concepts

Transistor varieties
索引 电子学概念 晶体管类型
 
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Characteristic Curve for UJT

UJT 的特性曲线

The negative resistance region in the characteristic of the unijunction transistor makes it useful for constructing relaxation oscillators.

负电阻区使单结晶体管在构造弛豫振荡器时非常有用。
Index

Electronics concepts

Transistor varieties
索引 电子学概念 晶体管类型
 
HyperPhysics*****Electricity and magnetism
HyperPhysics ***** 电磁学
R Nave
Go Back
返回