Bilingual edition: English is preserved and Chinese follows each unit. Terminology uses the confirmed v20260916 glossary; automated semantic review remains traceable. 中英双语版:英文原文完整保留,中文紧随对应单元;术语采用 v20260916 确认表,自动语义审校结果可追溯。
An n-type unijunction transistor (left symbol) is made by implanting a small p-type emitter probe in a bar of n-type silicon. The emitter probe is offset from the center of the bar and there are two bases as shown below.