Bilingual edition: English is preserved and Chinese follows each unit. Terminology uses the confirmed v20260916 glossary; automated semantic review remains traceable.
中英双语版:英文原文完整保留,中文紧随对应单元;术语采用 v20260916 确认表,自动语义审校结果可追溯。

Light Detectors

光探测器
Photoresistors
光敏电阻
Solar cells
太阳能电池
Phototransistors
光敏晶体管
Photodiodes
光敏二极管
Index

Optoelectronics concepts

Electronics concepts
索引光电概念电子概念
 
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Photoresistors

光敏电阻

Low cost, two lead photoresistors using a cadmium sulfide (CdS) element show a dramatic decrease in resistance when illuminated and are commonly used as a light sensing element for security lights, etc. so that they will turn on at night. In the dark, the resistance is very high, in the 1 megohm range. When illuminated, the resistance may drop to a few hundred ohms. They are typically more sensitive to green light, and they have a very high sensitivity compared to other types of sensors. They cannot be practically used for high speed switching or modulation for communications purposes because there is a "memory effect", requiring on the order of a second for the resistance to rise to its dark resistance.

低成本的双引脚光敏电阻使用硫化镉(CdS)元件,当被光照时电阻会显著下降,常用于安全灯等的光感应元件,以便在夜间开启。在黑暗中,其电阻非常高,大约在1兆欧范围内。当被光照时,电阻可能降至几百欧姆。它们对绿色光更为敏感,其灵敏度相比其他类型的传感器非常高。由于存在“记忆效应”,它们无法实际用于高速开关或通信调制,因为电阻要上升到暗处电阻需要约1秒的时间。
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Electronics concepts

Optoelectronics concepts
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Solar Cells

太阳能电池

Silicon photovoltaic cells are typically thought of as voltage supplies, but they are also useful as sensitive detectors of light and near infrared. Solar cells are silicon wafers which are doped to produce a p-n junction. Commonly used "cells" are produced as wafers of diameter about 8 cm and 3 mm thickness which are cut from a crystalline silicon rod. The thin wafer is doped on one side to produce p-material (e.g., boron doped silicon) and on the other side to produce n-material (e.g., phosphorous doped silicon). The p material is typically connected to a metal base and the top side of the wafer (n-type) has a grid of electrical contacts. When light strikes the top of the wafer, it can penetrate through the p-n junctions and free electrons which can cross the junction into the n-type region. Electrons are then held in the n-region, being unable to recross the junction into the p-region. This establishes a voltage of about 0.5 volts and a cell as described above can produce about 1 watt of electrical output.

硅光电池通常被视为电压源,但它们也能够作为对光和近红外线敏感的探测器。太阳能电池是经过掺杂以形成p-n结的硅薄片。常用的“电池”是直径约为8厘米、厚度3毫米的薄片,这些薄片是从单晶硅棒中切割出来的。薄片的一侧被掺杂以形成p区(例如,掺硼的硅),另一侧被掺杂以形成n区(例如,掺磷的硅)。p区通常连接到金属基座,而薄片的顶部(n型)则有网格状的电接触点。当光照射到薄片顶部时,它可以穿透p-n结和自由电子,这些电子可以跨越结进入n区。电子随后被限制在n区,无法再返回到p区。这建立了约0.5伏的电压,如上所述的电池可以产生约1瓦的电输出。
Index

Electronics concepts

Optoelectronics concepts

References
Mims, Forrest, Optoelectronic Circuits
索引 电子学概念 光电子学概念 参考文献 Mims, Forrest, 光电子电路
 
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Phototransistors

光敏晶体管

A standard transistor is a three-lead device, and although the phototransistor has three regions, typically NPN, the base region is enlarged and generally does not have a lead attached to it. The collector-base junction is sensitive to light falling on it; a base current proportional to the light intensity is produced. This initiates a collector current proportional to the light intensity.

标准晶体管是一种三端器件,尽管光晶体管有三个区域,通常为NPN型,但基区被扩大,通常不连接引线。集电极-基极结对落在其上的光敏感;会产生与光强度成正比的基极电流。这会引发与光强度成正比的集电极电流。
Component information
组件信息
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Optoelectronics concepts
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Phototransistor

光敏晶体管

The two terminal phototransistor at left allows a current to flow which is proportional to the illuminance on the surface of the unit. It is typically more sensitive than the photodiode, but also slower. It can be used to make a simple light meter.

左侧的双端光敏晶体管允许电流流动,该电流与单位表面的光照度成正比。它通常比光电二极管更敏感,但响应也更慢。它可以用来制作一个简单的光度计。
Index

Electronics concepts

Optoelectronics concepts
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