Conduction Electron Population for Semiconductor半导体中的传导电子数
![]() The conduction electron population for a semiconductor is calculated by multiplying the density of conduction electron states r(E) times the Fermi function f(E). The number of conduction electrons as a function of energy is then given by 半导体中传导电子的数量由传导电子态密度 r (E) 乘以费米函数 f(E) 计算得到。传导电子数量随能量变化的函数则表示为
![]() This can be simplified by noting that for the energies of the conduction band, E-EF>>1, so the 1 in the denominator of the Fermi function becomes insignificant. I.e., the tail of the function which extends into the conduction band is so far out that it can be approximated by the Boltzmann function. Using the fact that 这可以通过注意到导带的能量E - E_F >>1来简化,因此费米函数分母中的1可以忽略不计。即,延伸到导带的函数尾部如此遥远,可以近似用波尔兹曼函数来代替。利用以下事实:
The population density can then be written 人口密度可以写成
![]() The total number of electrons in the conduction band, Ncb, can then be obtained by integrating the above function from the bottom of the conduction band upward. For all practical purposes, the upper limit of the integral can be taken to be infinity since by the time we reach the top of the conduction band, the integrand will be essentially zero. 导带中电子的总数 $N_{cb}$ 可以通过将上述函数从导带底部向上积分得到。对于实际应用来说,积分的上限可以取为无穷大,因为在到达导带顶部时,被积函数将基本上为零。
E F = E gap /2(专名或术语) |
Index Semiconductor concepts Semiconductors for electronics Reference Simpson Sec 4.7 索引 半导体概念 半导体在电子学中的应用 参考 Simpson 第4.7节 | |||
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