P-N Energy BandsP-N 能带
|
Index Semiconductor concepts Semiconductors for electronics 索引 半导体概念 半导体在电子学中的应用 | ||||
|
Go Back
返回 | ||||
P-N Energy BandsP-N 能带
|
Index Semiconductor concepts Semiconductors for electronics 索引 半导体概念 半导体在电子学中的应用 | ||||
|
Go Back
返回 | ||||
P-N Energy BandsP-N 能带
|
Index Semiconductor concepts Semiconductors for electronics 索引 半导体概念 半导体在电子学中的应用 | |||||
|
Go Back
返回 | |||||
Forward Biased Conduction正向偏置导电
|
Index Semiconductor concepts Semiconductors for electronics 索引 半导体概念 半导体在电子学中的应用 | |||||
|
Go Back
返回 | |||||
Forward Biased Conduction正向偏置导电
The forward current in a p-n junction when it is forward-biased (illustrated below) involves electrons from the n-type material moving leftward across the junction and combining with holes in the p-type material. Electrons can then proceed further leftward by jumping from hole to hole, so the holes can be said to be moving to the right in this process. 在p-n结正向偏置时(如图所示), forward电流涉及从n型材料中的电子向左移动穿过结并与p型材料中的空穴结合。电子随后可以跳到下一个空穴,因此可以说空穴向右移动。
![]() ![]() |
Index Semiconductor concepts Semiconductors for electronics 索引 半导体概念 半导体在电子学中的应用 | ||
|
Go Back
返回 |