Bilingual edition: English is preserved and Chinese follows each unit. Terminology uses the confirmed v20260916 glossary; automated semantic review remains traceable.
中英双语版:英文原文完整保留,中文紧随对应单元;术语采用 v20260916 确认表,自动语义审校结果可追溯。

Intrinsic Semiconductor

本征半导体

A silicon crystal is different from an insulator because at any temperature above absolute zero temperature, there is a finite probability that an electron in the lattice will be knocked loose from its position, leaving behind an electron deficiency called a "hole".

一个硅晶体与绝缘体不同,因为在任何高于绝对零度的温度下,都有一定的概率使晶格中的一个电子脱离原位置,留下一个称为‘空穴’的电子空缺。

If a voltage is applied, then both the electron and the hole can contribute to a small current flow.

若施加电压,则电子和空穴均可贡献于微小的电流流动。

The conductivity of a semiconductor can be modeled in terms of the band theory of solids. The band model of a semiconductor suggests that at ordinary temperatures there is a finite possibility that electrons can reach the conduction band and contribute to electrical conduction.

半导体的导电性可以根据固体的带理论进行建模。半导体的带模型表明,在常温下,电子有有限的可能性跃迁到导带并参与电导。
The term intrinsic here distinguishes between the properties of pure "intrinsic" silicon and the dramatically different properties of doped n-type or p-type semiconductors.
这里的‘内在’一词区分了纯‘内在’硅的性质与掺杂后的n型或p型半导体显著不同的性质。
Electrons and holes
电子与空穴
Index

Semiconductor concepts
索引 半导体概念
 
HyperPhysics***** Condensed Matter
HyperPhysics ***** 凝聚态物理
R Nave
Go Back
返回





Semiconductor Current

半导体电流
Both electrons and holes contribute to current flow in an intrinsic semiconductor.
Further discussion
进一步讨论
在本征半导体中,电子和空穴都对电流流动有贡献。
Index

Semiconductor concepts
索引 半导体概念
 
HyperPhysics***** Condensed Matter
HyperPhysics ***** 凝聚态物理
R Nave
Go Back
返回





Semiconductor Current

半导体电流
The current which will flow in an intrinsic semiconductor consists of both electron and hole current. That is, the electrons which have been freed from their lattice positions into the conduction band can move through the material.
In addition, other electrons can hop between lattice positions to fill the vacancies left by the freed electrons. This additional mechanism is called hole conduction because it is as if the holes are migrating across the material in the direction opposite to the free electron movement.
此外,其他电子也可以在晶格位置之间跃迁,填补自由电子留下的空位。这种额外的机制称为空穴导电,因为这似乎就像空穴在材料中向自由电子运动的相反方向迁移一样。


The current flow in an intrinsic semiconductor is influenced by the density of energy states which in turn influences the electron density in the conduction band. This current is highly temperature dependent.

在本征半导体中,电流的流动受能量态密度的影响,而这种能量态密度又影响导带中的电子密度。这种电流高度依赖于温度。
在本征半导体中流动的电流由电子电流和空穴电流共同组成。也就是说,那些从晶格位置中释放出来进入导带的电子可以在材料中移动。
Index

Semiconductor concepts
索引 半导体概念
 
HyperPhysics***** Condensed Matter
HyperPhysics ***** 凝聚态物理
R Nave
Go Back
返回





Electrons and Holes

电子与空穴

In an intrinsic semiconductor like silicon at temperatures above absolute zero, there will be some electrons which are excited across the band gap into the conduction band and which can produce current. When the electron in pure silicon crosses the gap, it leaves behind an electron vacancy or "hole" in the regular silicon lattice. Under the influence of an external voltage, both the electron and the hole can move across the material. In an n-type semiconductor, the dopant contributes extra electrons, dramatically increasing the conductivity. In a p-type semiconductor, the dopant produces extra vacancies or holes, which likewise increase the conductivity. It is however the behavior of the p-n junction which is the key to the enormous variety of solid-state electronic devices.

在温度高于绝对零度时,像硅这样的本征半导体中,有些电子会被激发跨越带隙进入导带,并能够产生电流。当纯硅中的电子跨越带隙时,它会在常规的硅晶格中留下一个电子空位或‘空穴’。在外部电压的影响下,电子和空穴都可以在材料中移动。在n型半导体中,掺杂剂贡献额外的电子,显著提高了导电性。在p型半导体中,掺杂剂产生额外的空位或空穴,同样提高了导电性。然而,p-n结的行为才是固态电子器件种类繁多的关键。

Effective masses of electrons and holes
电子和空穴的有效质量
Index

Semiconductor concepts
索引 半导体概念
 
HyperPhysics***** Condensed Matter
HyperPhysics ***** 凝聚态物理
R Nave
Go Back
返回