Bilingual edition: English is preserved and Chinese follows each unit. Terminology uses the confirmed v20260916 glossary; automated semantic review remains traceable.
中英双语版：英文原文完整保留，中文紧随对应单元；术语采用 v20260916 确认表，自动语义审校结果可追溯。

Base-Emitter Voltage

基极-发射极电压
The entire normal range of silicon transistor operation involves a change in base-emitter voltage of only about two-tenths of a volt. This is because the base-emitter diode is forward biased. One of the constraints on transistor action is that this voltage remains at about 0.6 volts (often referred to as the diode drop). A small change in VBE can produce a large change in collector current and achieve current amplification.
硅晶体管的正常工作范围涉及基极-发射极电压的变化仅约0.2伏。这是因为基极-发射极二极管处于正向偏置状态。晶体管工作的其中一个限制是该电压保持在约0.6伏（通常称为二极管压降）。基极-发射极电压的微小变化可以引起集电极电流的显著变化，从而实现电流放大。
Base-Emitter Junction Details
基极-发射极接点细节
 Index

Semiconductor concepts

Semiconductors for electronics
索引 半导体概念 半导体在电子学中的应用
 
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