Bands for Doped Semiconductors

The application of band theory to n-type and p-type semiconductors shows that extra levels have been added by the impurities. In n-type material there are electron energy levels near the top of the band gap so that they can be easily excited into the conduction band. In p-type material, extra holes in the band gap allow excitation of valence band electrons, leaving mobile holes in the valence band.

N-Type Band Structure

The addition of donor impurities contributes electron energy levels high in the semiconductor band gap so that electrons can be easily excited into the conduction band. This shifts the effective Fermi level to a point about halfway between the donor levels and the conduction band.

Electrons can be elevated to the conduction band with the energy provided by an applied voltage and move through the material. The electrons are said to be the "majority carriers" for current flow in an n-type semiconductor. 电子可以借助施加电压提供的能量跃迁至导带并在材料中移动。这些电子被称为n型半导体中电流流动的'多数载流子'。

P-Type Band Structure

Electrons can be elevated from the valence band to the holes in the band gap with the energy provided by an applied voltage. Since electrons can be exchanged between the holes, the holes are said to be mobile. The holes are said to be the "majority carriers" for current flow in a p-type semiconductor. 电子可以借助外加电压提供的能量，从价带跃迁到带隙中的空穴。由于电子可以在空穴之间交换，空穴被称作是导电的。在p型半导体中，空穴被称为“多数载流子”。