Band Theory of Solids固体的能带理论
A useful way to visualize the difference between conductors, insulators and semiconductors is to plot the available energies for electrons in the materials. Instead of having discrete energies as in the case of free atoms, the available energy states form bands. Crucial to the conduction process is whether or not there are electrons in the conduction band. In insulators the electrons in the valence band are separated by a large gap from the conduction band, in conductors like metals the valence band overlaps the conduction band, and in semiconductors there is a small enough gap between the valence and conduction bands that thermal or other excitations can bridge the gap. With such a small gap, the presence of a small percentage of a doping material can increase conductivity dramatically. 一种有助于理解导体、绝缘体和半导体之间差异的方法是绘制材料中电子的可用能量。与自由原子的情况不同,材料中的可用能量状态形成带。传导过程的关键在于传导带中是否存在电子。在绝缘体中,价带中的电子与传导带之间有较大的能量间隙;在导体中,如金属,价带与传导带重叠;而在半导体中,价带与传导带之间的间隙很小,热或其它激发可以跨越这个间隙。由于这个间隙很小,少量掺杂剂的加入就可以显著提高导电性。
An important parameter in the band theory is the Fermi level, the top of the available electron energy levels at low temperatures. The position of the Fermi level with the relation to the conduction band is a crucial factor in determining electrical properties. 带理论中的一个重要参数是费米电平,即在低温下电子可利用能级的顶部。费米电平与导带之间的位置是决定电学性质的关键因素。
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Energy Bands for Solids固体的能带
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Energy Bands Comments能带注释
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Insulator Energy Bands绝缘体能带
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Semiconductor Energy Bands半导体能带
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Conductor Energy Bands导体能带
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Silicon Energy Bands硅的能量带
At finite temperatures, the number of electrons which reach the conduction band and contribute to current can be modeled by the Fermi function. That current is small compared to that in doped semiconductors under the same conditions.
![]() Compare to germanium与锗比较 在有限温度下,能够到达导带并参与导电的电子数量可以用费米函数来建模。在相同条件下,这种电流远小于掺杂半导体中的电流。 |
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Germanium Energy Bands锗的能带
At finite temperatures, the number of electrons which reach the conduction band and contribute to current can be modeled by the Fermi function. That current is small compared to that in doped semiconductors under the same conditions.
![]() Compare to silicon与硅相比 在有限温度下,能够到达导带并参与导电的电子数量可以用费米函数来建模。在相同条件下,这种电流远小于掺杂半导体中的电流。 |
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