The Zener Effect泽纳效应
With the application of sufficient reverse voltage, a p-n junction will experience a rapid avalanche breakdown and conduct current in the reverse direction. Valence electrons which break free under the influence of the applied electric field can be accelerated enough that they can knock loose other electrons and the subsequent collisions quickly become an avalanche. When this process is taking place, very small changes in voltage can cause very large changes in current. The breakdown process depends upon the applied electric field, so by changing the thickness of the layer to which the voltage is applied, zener diodes can be formed which break down at voltages from about 4 volts to several hundred volts.
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Index Semiconductor concepts Semiconductors for electronics Electronics concepts 索引 半导体概念 半导体在电子学中的应用 电子学概念 | |||
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Zener Diode齐纳二极管
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Index Semiconductor concepts Semiconductors for electronics Electronics concepts 索引 半导体概念 半导体在电子学中的应用 电子学概念 | |||||||
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Tunnel Diode Characteristic隧道二极管特性
In 1957, Esaki, Kurose and Suzuki discovered that quantum mechanical tunneling of electrons could be achieved in a solid state diode. Josephson had discovered tunneling characteristics in the Josephson junction for superconductors. Esaki and Josephson shared the 1973 Nobel Prize for these discoveries.
1957年,Esaki、Kurose和Suzuki发现电子在固体二极管中的量子力学隧穿效应。Josephson在超导体的结中发现了隧穿特性。Esaki和Josephson因这些发现共享了1973年诺贝尔奖。 For small forward bias, electrons tunnel across the depletion region from the P to the N side and fill states in the conduction band on the N-side. They align with hole states on the P-side. With increasing forward voltage, there is increasing misalignment and the current begins to drop with increasing forward voltage, producing a "negative resistance" behavior. For higher forward voltages, the junction begins to act like a normally forward biased diode, but the negative resistance regime was found to be very useful in producing oscillators. 在小正向偏置下,电子从P区隧道穿过耗尽区到N区,并在N区的导带中填充状态。它们与P区的空穴状态对齐。随着正向电压的增加,这种对齐程度逐渐减小,电流开始随着正向电压的增加而下降,产生一种‘负电阻’行为。对于更高的正向电压,结开始像通常正向偏置的二极管一样工作,但负电阻区域被发现非常有用,可用于产生振荡器。 Tunnel diode oscillators were found to be very useful through the 1970s as high-frequency oscillators and found use in the space program. They have since been mostly replaced with a variety of other oscillator types.
通过1970年代,隧道二极管振荡器作为高频振荡器被发现非常有用,并在太空计划中得到应用。它们此后大多被各种其他类型的振荡器所取代。 |
Index Semiconductor concepts Semiconductors for electronics Electronics concepts Tunnel diode, Wiki Floyd, Electronic Devices, Ch 3-5 索引 半导体概念 半导体在电子学中的应用 电子学概念 隧道二极管,维基百科 Floyd,电子器件,第3-5章 | ||||
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