Bilingual edition: English is preserved and Chinese follows each unit. Terminology uses the confirmed v20260916 glossary; automated semantic review remains traceable.
中英双语版:英文原文完整保留,中文紧随对应单元;术语采用 v20260916 确认表,自动语义审校结果可追溯。

The Zener Effect

泽纳效应
With the application of sufficient reverse voltage, a p-n junction will experience a rapid avalanche breakdown and conduct current in the reverse direction. Valence electrons which break free under the influence of the applied electric field can be accelerated enough that they can knock loose other electrons and the subsequent collisions quickly become an avalanche. When this process is taking place, very small changes in voltage can cause very large changes in current. The breakdown process depends upon the applied electric field, so by changing the thickness of the layer to which the voltage is applied, zener diodes can be formed which break down at voltages from about 4 volts to several hundred volts.
当施加足够的反向电压时,一个p-n结将经历快速的雪崩击穿并使电流反向流动。在电场的作用下,价电子挣脱束缚后会被加速,足以撞击其他电子,使后续的碰撞迅速形成雪崩。当这一过程发生时,很小的电压变化会引起很大的电流变化。击穿过程取决于所施加的电场,因此通过改变施加电压的层厚,可以形成击穿电压从约4伏到数百伏的齐纳二极管。
Zener applications
泽纳应用
Zener diode
齐纳二极管
zener regulator
齐纳稳压器
Index

Semiconductor concepts

Semiconductors for electronics

Electronics concepts
索引 半导体概念 半导体在电子学中的应用 电子学概念
 
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Zener Diode

齐纳二极管

The zener diode uses a p-n junction in reverse bias to make use of the zener effect, which is a breakdown phenomenon which holds the voltage close to a constant value called the zener voltage. It is useful in zener regulators to provide a more constant voltage, for improvement of regulated power supplies, and for limiter applications.
齐纳二极管利用反向偏置的p-n结来利用齐纳效应,这是一种击穿现象,可以使电压接近一个称为齐纳电压的常数值。它在齐纳稳压器中用于提供更稳定的电压,以改进稳压电源,并用于限幅应用。
Zener effect
齐纳效应
Zener current characteristics
齐纳电流特性
Zener applications
泽纳应用
Index

Semiconductor concepts

Semiconductors for electronics

Electronics concepts
索引 半导体概念 半导体在电子学中的应用 电子学概念
 
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Tunnel Diode Characteristic

隧道二极管特性

In 1957, Esaki, Kurose and Suzuki discovered that quantum mechanical tunneling of electrons could be achieved in a solid state diode. Josephson had discovered tunneling characteristics in the Josephson junction for superconductors. Esaki and Josephson shared the 1973 Nobel Prize for these discoveries.
In the case of the tunnel diode, the conditions for tunneling were achieved by more heavily doping the semiconductors associated with the pn junction. With germanium or gallium arsenide the depletion layer at the junction was very narrow, and permitted electrons to tunnel across the barrier. For very low reverse voltages through small positive voltages, the tunneling increased and the junction acted like a conductor.
在隧道二极管的情况下,通过更 heavily doping 与 pn 结相关的半导体,实现了隧道效应。使用锗或砷化镓时,结处的耗尽层非常狭窄,允许电子穿过势垒。对于非常低的反向电压或小的正向电压,隧道效应增强,结 behaves like a conductor。

1957年,Esaki、Kurose和Suzuki发现电子在固体二极管中的量子力学隧穿效应。Josephson在超导体的结中发现了隧穿特性。Esaki和Josephson因这些发现共享了1973年诺贝尔奖。

For small forward bias, electrons tunnel across the depletion region from the P to the N side and fill states in the conduction band on the N-side. They align with hole states on the P-side. With increasing forward voltage, there is increasing misalignment and the current begins to drop with increasing forward voltage, producing a "negative resistance" behavior. For higher forward voltages, the junction begins to act like a normally forward biased diode, but the negative resistance regime was found to be very useful in producing oscillators.

在小正向偏置下,电子从P区隧道穿过耗尽区到N区,并在N区的导带中填充状态。它们与P区的空穴状态对齐。随着正向电压的增加,这种对齐程度逐渐减小,电流开始随着正向电压的增加而下降,产生一种‘负电阻’行为。对于更高的正向电压,结开始像通常正向偏置的二极管一样工作,但负电阻区域被发现非常有用,可用于产生振荡器。

Tunnel diode oscillators were found to be very useful through the 1970s as high-frequency oscillators and found use in the space program. They have since been mostly replaced with a variety of other oscillator types.

Circuit symbol
电路符号
Application in oscillator
在振子中的应用
通过1970年代,隧道二极管振荡器作为高频振荡器被发现非常有用,并在太空计划中得到应用。它们此后大多被各种其他类型的振荡器所取代。
Index

Semiconductor concepts

Semiconductors for electronics

Electronics concepts

Tunnel diode, Wiki

Floyd, Electronic Devices,
Ch 3-5
索引 半导体概念 半导体在电子学中的应用 电子学概念 隧道二极管,维基百科 Floyd,电子器件,第3-5章
 
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