Bilingual edition: English is preserved and Chinese follows each unit. Terminology uses the confirmed v20260916 glossary; automated semantic review remains traceable.
中英双语版:英文原文完整保留,中文紧随对应单元;术语采用 v20260916 确认表,自动语义审校结果可追溯。

Laser Diodes

激光二极管

Laser action (with the resultant monochromatic and coherent light output) can be achieved in a p-n junction formed by two doped gallium arsenide layers. The two ends of the structure need to be optically flat and parallel with one end mirrored and one partially reflective. The length of the junction must be precisely related to the wavelength of the light to be emitted. The junction is forward biased and the recombination process produces light as in the LED (incoherent). Above a certain current threshold the photons moving parallel to the junction can stimulate emission and initiate laser action.

激光作用(产生出单色且相干的光输出)可以在由两个掺杂的砷化镓层形成的p-n结中实现。结构的两端需要光学平直且平行,一端为镜面,另一端部分反射。结的长度必须精确地与要发射的光的波长相关联。结处于正向偏置状态,电子复合过程产生光(如LED,非相干)。当电流超过一定阈值时,沿结方向移动的光子可以刺激发射并引发激光作用。
Type
类型
Peak Power
峰值功率
Wavelength
波长
Application
应用
GaAs
砷化镓
5 mW
5毫瓦
840 nm
840纳米
CD Players
CD播放器
AlGaAs50 mW
50毫瓦
760 nm
760纳米
Laser printers
激光打印机
GaInAsP20 mW
20毫瓦
1300 nm
1300纳米
Fiber communications
光纤通信
Index

Laser concepts

Laser types

Optoelectronics concepts

Reference
Garmire
索引激光概念 激光类型 光电子学概念 参考Garmire
  HyperPhysics***** Quantum Physics ***** Optics
HyperPhysics ***** 量子物理 ***** 光学
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