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Laser action (with the resultant monochromatic and coherent light output) can be achieved in a p-n junction formed by two doped gallium arsenide layers. The two ends of the structure need to be optically flat and parallel with one end mirrored and one partially reflective. The length of the junction must be precisely related to the wavelength of the light to be emitted. The junction is forward biased and the recombination process produces light as in the LED (incoherent). Above a certain current threshold the photons moving parallel to the junction can stimulate emission and initiate laser action.
激光作用(产生出单色且相干的光输出)可以在由两个掺杂的砷化镓层形成的p-n结中实现。结构的两端需要光学平直且平行,一端为镜面,另一端部分反射。结的长度必须精确地与要发射的光的波长相关联。结处于正向偏置状态,电子复合过程产生光(如LED,非相干)。当电流超过一定阈值时,沿结方向移动的光子可以刺激发射并引发激光作用。
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