Semiconductor Band Gaps

半导体带隙

From the band theory of solids we see that semiconductors have a band gap between the valence and conduction bands. The size of the band gap has implications for the types of applications that can be made. A low band gap implies higher intrinsic conduction, and a high band gap implies a larger possible photon energy associated with a transition across the gap in light emitting diodes. Band gaps in electron volts are given for a few semiconductor materials in the table below.

从固体的带理论我们看到，半导体的价带和导带之间存在一个带隙。带隙的大小对可能的应用类型有影响。较低的带隙意味着较高的本征导电性，而较高的带隙则意味着在发光二极管中跨越间隙的跃迁可能关联到更大的光子能量。下面表格中列出了几种半导体材料的带隙，单位为电子伏。

Material 材料	Band gap in eV 电子伏特的禁带宽度
PbSe	0.27
PbTe	0.29
PbS	0.37
InN	0.67*
Ge	0.67
GaSb	0.7
Si 硅	1.11
InP	1.35
GaAs 砷化镓	1.43
CdTe	1.58
AlSb	1.6
CdSe	1.73
AlAs	2.16
ZnTe	2.25
GaP	2.26
CdS	2.42
AlP	2.45
ZnSe	2.7
SiC	2.86
GaN 氮化镓	3.4
ZnS	3.6
Diamond 钻石	5.5
AlN 氮化铝	6.2*

* InN, GaN, and AlN are currently under study at Georgia State University. Other values are from Streetman and Banerje. The value for InN is not considered to be as well determined as those for the others, but illustrates that the band gap energies stretch from the near infrared to the ultraviolet. AlN, having a band gap greater than that of diamond, is a good insulator. GaN has been used for the production of blue LEDs.

* InN、GaN 和 AlN 目前正在佐治亚州立大学进行研究。其他值来自 Streetman 和 Banerje。InN 的值被认为不如其他值确定，但表明带隙能量从近红外到紫外范围扩展。AlN 的带隙大于金刚石，因此是一个良好的绝缘体。GaN 已被用于生产蓝光LED。

Another band gap table

另一条带隙表